
Wafer Size:
2 inch~6 inch OF/IF
6 inch~8 inch Notch
2 inch~6 inch OF/IF
6 inch~8 inch Notch
Highly Accurate & Low Damage Edge Grinding and Notch Grinding
SiC (Silicon Carbide) is a compound material consists of silicon (Si) and carbon (C), that has high hardness and heat resistance, and it’s chemically stable.
As it has a wide bandgap, the application to the semiconductor material is getting promoted.
With the high accuracy and high rigid grinding system of our edge grinder, smooth finish can be achieved even with SiC wafer that is difficult to cut material.
Capable with R-type, T-type and asymmetric shape with easy operation.
The notch depth, angle and corner radius (R) are measured, and the stable shaping accuracy is achieved by the automatic correction.