Edge Grinding of SiC Wafer (Notch Grinding, Beveling)

Highly Accurate & Low Damage Edge Grinding and Notch Grinding

Edge Grinding of SiC Wafer
Wafer Size:
2 inch~6 inch OF/IF
6 inch~8 inch Notch

Feature

SiC (Silicon Carbide) is a compound material consists of silicon (Si) and carbon (C), that has high hardness and heat resistance, and it’s chemically stable.
As it has a wide bandgap, the application to the semiconductor material is getting promoted.

With the high accuracy and high rigid grinding system of our edge grinder, smooth finish can be achieved even with SiC wafer that is difficult to cut material.

Example of Edge Shape (Cross Section)

R-type
R-type
T-type
T-type
Asymmetric
Asymmetric

Capable with R-type, T-type and asymmetric shape with easy operation.

Edge Grinding of Notch *Actual Measured Data of Edge Grinding with W-GM

Process

The notch depth, angle and corner radius (R) are measured, and the stable shaping accuracy is achieved by the automatic correction.

Process

About Semiconductor Manufacturing Equipment

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