Edge Grinding of Si Wafer

Edge grinding of 2 inch ~ 18 inch is available. Also, changing to smaller wafer size such as 12 inch to 8 inch and 4 inch to 3 inch is possible.

Wafer Size: 2 inch ~ 18 inch
Wafer Size: 2 inch ~ 18 inch

Feature

Si wafer is used as a substrate for semiconductor, and the most major material used for the IC production.
The edge grinding process is very important in the wafer manufacturing process, which affects the yield of wafer and the processing time of post process.

With the Low Damage Grinding process which is our unique technology, the mirror finish of Ra=20nm can be achieved.
Also, it is capable with the various type of edge shape, as-cut, lapped and etched wafers.

Changing to smaller wafer size such as 12 inch to 8 inch and 4 inch to 3 inch is also possible.

Example of Edge Shape (Cross Section)

R-type
R-type
T-type
T-type
Asymmetric
Asymmetric

Capable with R-type, T-type and asymmetric shape with easy operation.

Unique Low Damage Grinding Process

Process with less damage is achievable with fixed abrasive.
Roughness: Ra=200 nm ⇒ 20 nm *Calculated by our standard

Conventional Process
Conventional Process
LDG Process
LDG Process
Process

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