Semiconductor Manufacturing Equipment
ML3200
Fully Automatic
Laser
Φ300mm
Semiconductors
Fully automatic dicing machine with IR laser for Φ300mm wafers

ML3200

Equipped with an IR laser engine, with the laser beam focused on the silicon interior, this machine forms laser processing regions and performs singulation into chips in the expansion process. The loader specification can be selected depending on the processing process used by the customer.

Features

Contactless dicing is possible without damaging the silicon wafer surface
A completely dry process is supported which is ideal for processing such as for a MEMS device which does not tolerate a processing load and water. 
A broad range of thicknesses can be supported, from thin items to thick items, by adjusting the number of processing scans depending on the silicon wafer thickness. 

A significant reduction in cost through the increased yield
Narrowing down the dicing scribe width contributes to a significant increase in yield and a reduction in cost. 
In the case of a small chip device with a wafer size of Φ 200 mm and a chip size of 1.0 mm, the chip yield is increased by 20% or more by changing the design of the dicing scribe from 90 μm to 20 μm. 

Enhanced productivity (throughput)
A high-rigidity platform is used. High-speed dicing of 800 mm/sec or greater is available through the high-output laser combination. 

Plenty of optional settings
A broad range of optional features are lined up related to processing quality and productivity, such as a device internal clean (class 100) specification, and a wafer thickness measurement feature.

LAG (Laser After Grinding) Process

Features

the completely dry process is ideal for dicing such as for a MEMS device that does not tolerate water. 
Cost reduction is possible through the increased yield due to narrowing down the dicing street width.

LAG (Laser After Grinding) Process

GAL (Grinding After Laser) Process

Features

numerous achievements with ultra-thin dicing that is representative of memory devices 
Low damage, high bending strength, high-speed dicing is available.

GAL (Grinding After Laser) Process

Specifications

Maximum wafer size Φ300 mm
Handling method

Wafer handling

X axis Send speed entry range

0.1 to 2,100mm/sec

Y axis Resolution 0.0002 mm
Positioning precision 

Within 0,002mm /310mm

Specifications Dimensions (W x D x H)  1,712 mm × 2,960 mm × 1,800 mm
Weight 3,000 kg